t^ejm.l-donj.uatot. tpioduati, una. 20 stern ave. springfield, new jersey 07081 u.sa telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2n6802 IRFF430 mechanical data dimensions in mm (inches) n-channel enhancement mode power mosfet bv dss d(cont) ^ds(on) 500v 2.5 1.5q to39- package underside view pin 1 - source pin 2 - gate features ? avalanche energy rated ? hermetically sealed ? dynamic dv/dt rating ? simple drive requirements pin 3 - drain absolute maximum ratings (tcase = 25c unless otherwise stated) vgs id id idm pd eas dv/dt tj - tstg rejc rsja gate - source voltage continuous drain current (vgs = 10v , tcase = 25c) continuous drain current (vgs = 10v , tcase = 100c) pulsed drain current 1 power dissipation @ tcase = 25c linear derating factor single pulse avalanche energy 2 peak diode recovery 3 operating and storage temperature range thermal resistance junction to case thermal resistance junction-to-ambient 2qv 2.5a 1.5a 11a 25w 0.2w/c 0.35mj 3.5v/ns -55to+150c 5.0c/w 175c/w notes 1) pulse test: pulse width < 300^8, 6 < 2% 2) @ vdd = 50v , peak il = 2.5a , starting tj = 25c 3) @ isd < 2.5a , di/dt < 75a/^is , vdd < bvdss , tj < 150c , suggested rg = 7.5q nj scini-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished hy nj semi-conductors is believed to he both accurate and reliable at the time of going to press however nj semi-conductors assumes no responsibility tor any errors or omissions discovered in its use. nj semi-conductors encourages customers to vcrif'v that datasheets ure current before placing orders.
2n6802 IRFF430 electrical characteristics (tamb = 25c unless otherwise stated) parameter test conditions min. typ. max. unit static electrical ratings bvdss drain - source breakdown voltage abvdss temperature coefficient of atj breakdown voltage static drain - source on-state rds 15v ids = 15a vgs-o vds = 0.8bvdss tj=125"c vgs = 20v vgs = -20v 500 2 1.5 0.43 1.5 1.725 4 25 250 100 -100 v v/c q v s(u) ua na dynamic characteristics cjss input capacitance coss output capacitance crss reverse transfer capacitance qg total gate charge qgs gate - source charge qgd gate - drain ("miller") charge *d(on) turn-on delay time tr rise time *d(off) turn-off delay time tf fall time vgs = 0 vds = 25v f=1mhz vgs = 10v vds = 0.5bvds id = 2.5a id =2.5a vds = 0.5bvds rg = 7.5q 19.8 2.2 5.5 610 135 65 29.5 4.6 19.7 30 30 55 30 pf nc ns source - drain diode characteristics is continuous source current ism pulse source current 2 vsd diode forward voltage trr reverse recovery time qrr reverse recovery charge :on forward turn-on time s = 2.5a vgs = f= 1.5a tj = 25c dj / dt < 100a/us vdd $ 50v 2.5 11 1.4 900 7.0 negligible! a v ns uc notes 1) pulse test: pulse width < 300us, 5 < 2% 2) repetitive rating - pulse width limited by maximum junction temperature.
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